Compensation scheme for non-volatile memory

专利名称：Compensation scheme for non-volatile

memory

发明人：Yingchang Chen,Pankaj Kalra,Chandrasekhar

Gorla

申请号：US13773078申请日：20130221公开号：US08885400B2公开日：20141111

专利附图：

摘要：Methods for performing parallel voltage and current compensation duringreading and/or writing of memory cells in a memory array are described. In some

embodiments, the compensation may include adjusting a bit line voltage and/or bit linereference current applied to a memory cell based on a memory array zone, a bit linelayer, and a memory cell direction associated with the memory cell. The compensationmay include adjusting the bit line voltage and/or bit line reference current on a permemory cell basis depending on memory cell specific characteristics. In some

embodiments, a read/write circuit for reading and/or writing a memory cell may select abit line voltage from a plurality of bit line voltage options to be applied to the memorycell based on whether the memory cell has been characterized as a strong, weak, ortypical memory cell.

申请人：SanDisk 3D LLC

地址：Milpitas CA US

国籍：US

代理机构：Vierra Magen Marcus LLP

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