METHOD FOR DEPOSITING AN ENCAPSULATING FILM

专利名称：METHOD FOR DEPOSITING AN

ENCAPSULATING FILM

发明人：Jrjyan Jerry CHEN,Tae K. WON,Beom Soo

PARK,Young Jin CHOI,Soo Young CHOI

申请号：US13768921申请日：20130215

公开号：US20130210199A1公开日：20130815

专利附图：

摘要：A method and apparatus for depositing a material layer, such as encapsulatingfilm, onto a substrate is described. In one embodiment, an encapsulating film formationmethod includes delivering a gas mixture into a processing chamber, the gas mixturecomprising a silicone-containing gas, a first nitrogen-containing gas, a second nitrogen-containing gas and hydrogen gas; energizing the gas mixture within the processingchamber by applying between about 0.350 watts/cmto about 0.903 watts/cmto a gas

distribution plate assembly spaced about 800 mils to about 1800 mils above a substratepositioned within the processing chamber; maintaining the energized gas mixture withinthe processing chamber at a pressure of between about 0.5 Torr to about 3.0 Torr; anddepositing an inorganic encapsulating film on the substrate in the presence of theenergized gas mixture. In other embodiments, an organic dielectric layer is sandwichedbetween inorganic encapsulating layers.

申请人：Jrjyan Jerry CHEN,Tae K. WON,Beom Soo PARK,Young Jin CHOI,Soo YoungCHOI

地址：Campbell CA US,San Jose CA US,San Jose CA US,Santa Clara CA US,Fremont CAUS

国籍：US,US,US,US,US

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