Semiconductor structure with enhanced withstand vo

专利名称：Semiconductor structure with enhanced

withstand voltage

发明人：Alexis Bavard,Matthew Charles申请号：US15266125申请日：20160915公开号：US09923061B2公开日：20180320

专利附图：

摘要：A semiconductor structure including a substrate, a buffer layer, a superlatticeformed on the buffer layer, the superlattice including a pattern including n layers madeof different materials, n being at least equal to 2, each layer including an AlGaInBN type

material where x+y+w+z=1, the thickness of each layer being less than the criticalthickness thereof, the number of patterns being at least equal to 50, an insert layerwherein the material has a first lattice parameter, a layer of GaN material, wherein thelattice parameter is greater than the first lattice parameter such that the layer of GaNmaterial is compressed by the insert layer.

申请人：Commissariat a L'Energie Atomique et aux Energies Alternatives

地址：Paris FR

国籍：FR

代理机构：Oblon, McClelland, Maier & Neustadt, L.L.P.

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