FINFET DEVICE WITH VERTICAL SILICIDE ON RECESSED S

专利名称：FINFET DEVICE WITH VERTICAL SILICIDE ON

RECESSED SOURCE/DRAIN EPITAXYREGIONS

发明人：Keith E. Fogel,Pranita Kerber,Qiqing C.

Ouyang,Alexander Reznicek

申请号：US14583454申请日：20141226

公开号：US20150303281A1公开日：20151022

专利附图：

摘要：A method of forming a semiconductor device that includes forming a fin

structure from a semiconductor substrate, and forming a gate structure on a channelregion portion of the fin structure. A source region and a drain region are formed on asource region portion and a drain region portion of the fin structure on opposing sides ofthe channel portion of the fin structure. At least one sidewall of the source regionportion and the drain region portion of the fin structure is exposed. A metal

semiconductor alloy is formed on the at least one sidewall of the source region portionand the drain region portion of the fin structure that is exposed.

申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION

地址：Armonk NY US

国籍：US

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