PSEUDO DUAL PORT MEMORY

专利名称：PSEUDO DUAL PORT MEMORY发明人：Sei Seung YOON,Tony Chung Yiu

KWOK,Changho JUNG,Nishith Nitin DESAI

申请号：US144627申请日：20140820

公开号：US20160055903A1公开日：20160225

专利附图：

摘要：A memory and a method for operating the memory provided. In one aspect, thememory may be a PDP memory. The memory includes a control circuit configured togenerate a first clock and a second clock in response an edge of a clock for an access

cycle. A first input circuit is configured to receive an input for a first memory access basedon the first clock. The first input circuit includes a latch. The second input circuitconfigured to receive an input for a second memory access based on the second clock.The second input circuit includes a flip-flop.

申请人：QUALCOMM Incorporated

地址：San Diego CA US

国籍：US

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