ESD transistor for high voltage and ESD protection
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专利名称：ESD transistor for high voltage and ESD
protection circuit thereof
发明人：Kyong Jin Hwang,Jin Seop Shim,Jae Hyun Lee申请号：US14188136申请日：20140224公开号：US09431389B2公开日：20160830
专利附图：
摘要：An ESD transistor and an ESD protection circuit thereof are provided. An ESDtransistor includes a collector region disposed on a surface of a substrate, a sink regiondisposed vertically below the collector region, and a buried layer protruding horizontally
further than the sink region under the sink region.
申请人：MagnaChip Semiconductor, Ltd.
地址：Cheongju-si KR
国籍：KR
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