2SK3444资料

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

2SK3444

Switching Regulator, DC-DC Converter Applications Motor Drive Applications

• Low drain-source ON resistance: RDS (ON) = 65 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 200 V)

• Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

Unit: mm

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit Drain-source voltage

VDSS 200 V Drain-gate voltage (RGS = 20 kΩ) VDGR 200 V Gate-source voltage Drain current

DC (Note 1) Pulse (Note 1)

VGSS

±30 V ID 25 A

IDP 100 PD 125 W Drain power dissipation (Tc = 25°C) Single pulse avalanche energy

(Note 2) Avalanche current

Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range

―

JEDEC

mJ EAS 488 IAR 25 A EAR 12.5 mJ JEITA SC-97 TOSHIBA 2-9F1B

Tch 150 °C Tstg

−55 to 150

°C

Weight: 0.74 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Notice:

Please use the S1 pin for gate input Characteristics Symbol MaxUnit signal return. Make sure that the

Thermal resistance, channel to case Rth (ch-c) 1.00°C/W main current flows into the S2 pin.Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.26 mH, IAR = 25 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.

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4

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2SK3444 Marking

Part No. (or abbreviation code) K3444 Lot No. A line indicates

lead (Pb)-free package or lead (Pb)-free finish.

Electrical Characteristics (Note 4) (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. MaxUnitGate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge tf toff Qg Qgs Qgd IGSS IDSS V (BR) DSSVth RDS (ON) Ciss Crss Coss tr ton VGS 10 V0 V4.7 Ω ID = 12.5 AVOUTRL = 8.0 Ω VDS = 10 V, VGS = 0 V, f = 1 MHz VGS = ±25 V, VDS = 0 V VDS = 200 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 12.5 A ⎯ ⎯ 200 3.0 ⎯ ±10μA μA ⎯ 100⎯ ⎯ V ⎯ 5.0 V ⎯ 65 82 mΩ5 10 ⎯ S ⎯ 2080 ⎯ ⎯ 280 ⎯ ⎯ 1060 ⎯ ⎯ 20 ⎯ ⎯ 40 ⎯ ns ⎯ 10 ⎯ ⎯ 40 ⎯ ⎯ 44 ⎯ pF |Yfs| VDS = 10 V, ID = 12.5 A VDD∼ − 100 VDuty< = 1%, tw = 10 μs VDD∼ − 160 V, VGS = 10 V, ID = 25 A ⎯ 21 ⎯ ⎯ 23 ⎯ nC Note 4: Connect the S1 pin and S2 pin together, and ground them except during switching time measurement.

Source-Drain Diode Ratings and Characteristics (Note 5) (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. MaxUnit

Continuous drain reverse current

(Note 1, Note 5) Pulse drain reverse current (Note 1, Note 5) Continuous drain reverse current (Note 1, Note 5) Pulse drain reverse current (Note 1, Note 5) Forward voltage (diode) Reverse recovery time Reverse recovery charge

IDR1 IDRP1 IDR2 IDRP2 VDS2F trr Qrr

⎯ ⎯ ⎯ ⎯

IDR1 = 25 A, VGS = 0 V IDR = 25 A, VGS = 0 V,

dIDR/dt = 100 A/μs

⎯ ⎯ ⎯ ⎯ ⎯

⎯ 25 A ⎯ 100⎯ ⎯ ⎯

1 4 −1.5

A A A V

⎯ 290 ⎯ ns ⎯ 2.2 ⎯

μC

Note 5: IDR1, IDRP1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open.

IDR2, IDRP2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open. Unless otherwise specified, connect the S1 and S2 pins together, and ground them.

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2SK3444

ID – VDS

50 Common source 40 Tc = 25°C Pulse test 30 15 10 9.5 80100Common sourceTc = 25°C Pulse test ID – VDS

1512 Drain current ID (A) Drain current ID (A) 9 11 8.5 6010 409 208 VGS = 7 V 004812 2016 20 8 7.5 10 7 VGS = 6.5 V0 0 2 4 6 108 Drain-source voltage VDS (V) Drain-source voltage VDS (V)

ID – VGS

50 Common source VDS = 10 V Pulse test 4

VDS – VGS

Common sourceTc = 25°C Pulse test 340 30 Drain-source voltage VDS (V) Drain current ID (A) 2ID = 25 A Tc = −55°C 20 100 10 25112 6 00 0 0 4 8 12 2016 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V)

⎪Yfs⎪ – ID

100 Common source VDS = 10 V Pulse test 1000Common sourceTc = 25°C Pulse test

RDS (ON) – ID

Forward transfer admittance ⎪Yfs⎪ (S) Tc = −55°C10 100 25 Drain-source on resistance RDS (ON) (mΩ) 100VGS = 10 V 15 1 1 10

100

101

10100

Drain current ID (A) Drain current ID (A)

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2SK3444

RDS (ON) – Tc

160 Common source VGS = 10 V Pulse test 120 ID = 25 A 80 12 6100Common source Tc = 25°C Pulse test 10

IDR – VDS

Drain-source on resistance RDS (ON) (mΩ) Drain reverse current IDR (A) 101531VGS = 0 V −0.8 −1.0 −1.2 −1.4 −1.60.10 −0.2−0.4−0.0 0 −80 −40 0 40 80 120 160 Case temperature Tc (°C)

Drain-source voltage VDS (V)

Capacitance – VDS

10000 6 Vth – Tc

Gate threshold voltage Vth (V) 5Ciss1000 Coss Capacitance C (pF) 43 2Common source1V = 10 V DSID = 1 mA Pulse test 0−80 −40 0 40 80 100 Common source VGS = 0 V f = 1 MHz Tc = 25°C Crss120 160 10 0.1 1 10 100

Case temperature Tc (°C)

Drain-source voltage VDS (V)

PD – Tc

200 200

Dynamic input/output characteristics

20 Common source ID = 25 A Tc = 25°C Pulse test VDS = 40 V12016080VGS8 80 12 Drain power dissipation PD (W) Drain-source voltage VDS (V) 160 160VDS16 120 80 40 404 10 0 40 80 120 160

200

00 0 20 40 60 80 100 Case temperature Tc (°C)

Total gate charge Qg (nC)

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Gate-source voltage VGS (V) 2SK3444

rth – tw

10 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty = 0.5 PDMtT Duty = t/T Rth (ch-c) = 1.0°C/W 10 m100 m1 10 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0.01 10 μ 100 μ 1 m Pulse width tw (S)

Safe operating area

1000 500

EAS – Tch

Avalanche energy EAS (mJ) 400

100 ID max (pulsed) * 100 μs* 300

Drain current ID (A) ID max (continuous) 1 ms* 200

10 DC operation Tc = 25°C 100

0

25 50 75 100 125 150

1 * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. VDSS max0.1 1 10 100 1000

Channel temperature (initial) Tch (°C)

15 V−15 VBVDSS IAR VDD VDS

Drain-source voltage VDS (V)

Test circuit

ΕAS=

Waveform

⎛⎞1BVDSS⎟⋅L⋅I2⋅⎜

⎜B⎟2−VDD⎠⎝VDSS

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2SK3444

RESTRICTIONS ON PRODUCT USE

• The information contained herein is subject to change without notice.

20070701-EN

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.

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