Nitride semiconductor device, nitride semiconducto
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专利名称：Nitride semiconductor device, nitride
semiconductor wafer, and method forforming nitride semiconductor layer
发明人：Toshiki Hikosaka,Yoshiyuki Harada,Hisashi
Yoshida,Naoharu Sugiyama,Shinya Nunoue
申请号：US13780456申请日：20130228公开号：US09054036B2公开日：20150609
专利附图：
摘要：According to one embodiment, a nitride semiconductor device includes a
stacked body and a functional layer. The stacked body includes an AlGaN layer of AlGaN(0
申请人：Kabushiki Kaisha Toshiba
地址：Tokyo JP
国籍：JP
代理机构：Oblon, McClelland, Maier & Neustadt, L.L.P.
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